{"title":"Feedback reinforced accelerated aging for improved physical unclonable function stability","authors":"Eric Hunt-Schroeder , Tian Xia","doi":"10.1016/j.microrel.2025.115592","DOIUrl":null,"url":null,"abstract":"<div><div>The Pre-Amplifier Physical Unclonable Function (Pre-Amp PUF) is a promising new PUF topology with a low native array bit error rate (BER). Stabilization techniques to reduce the BER exist but often require storing the location of repeatable bit locations in non-volatile memory. This ‘helper data’ is expensive in chip area and power. In this paper we study for the first time the effects of aging on the Pre-Amp PUF design and its ability to self-reinforce the initial preferred state automatically. We then propose a novel Feedback Reinforced Accelerated Aging (FRAA) technique wherein the Pre-Amp PUF key error rate can be reduced to “zero” with no external user interaction required. Data is gated from leaving the PUF design during the FRAA process thereby keeping the PUF enrollment process dedicated to the end user. Statistical modeling and aging analysis are performed using a 5-nm FinFET process development kit.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"165 ","pages":"Article 115592"},"PeriodicalIF":1.6000,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271425000058","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The Pre-Amplifier Physical Unclonable Function (Pre-Amp PUF) is a promising new PUF topology with a low native array bit error rate (BER). Stabilization techniques to reduce the BER exist but often require storing the location of repeatable bit locations in non-volatile memory. This ‘helper data’ is expensive in chip area and power. In this paper we study for the first time the effects of aging on the Pre-Amp PUF design and its ability to self-reinforce the initial preferred state automatically. We then propose a novel Feedback Reinforced Accelerated Aging (FRAA) technique wherein the Pre-Amp PUF key error rate can be reduced to “zero” with no external user interaction required. Data is gated from leaving the PUF design during the FRAA process thereby keeping the PUF enrollment process dedicated to the end user. Statistical modeling and aging analysis are performed using a 5-nm FinFET process development kit.
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.