Parylene with different functional groups as a passivation layer for highly stable a-IGTO thin-film transistors

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-02-07 DOI:10.1016/j.mssp.2025.109325

Moonil Jung , Jin-Hwan Hong , Jong-Hyuk Choi , Moonsoo Kim , Kyeongbae Lee , Dongbhin Kim , Byoungdeog Choi

{"title":"Parylene with different functional groups as a passivation layer for highly stable a-IGTO thin-film transistors","authors":"Moonil Jung , Jin-Hwan Hong , Jong-Hyuk Choi , Moonsoo Kim , Kyeongbae Lee , Dongbhin Kim , Byoungdeog Choi","doi":"10.1016/j.mssp.2025.109325","DOIUrl":null,"url":null,"abstract":"<div><div>A passivation layer on thin-film transistors (TFTs) plays a role in suppressing defects caused by back-channel penetration of moisture, oxygen, and various gases from the external environment.</div><div>Among passivation layer materials, polymers can be applied on flexible electronic devices and are relatively easy to fabricate. Herein, we employed parylene-N, parylene-C, and parylene-F as passivation layers on amorphous indium–gallium–tin oxide (a-IGTO) TFTs to improve their electrical characteristics and reliability. Compared to bare a-IGTO TFTs, parylene-passivated a-IGTO TFTs showed better field-effect mobilities (<span><math><mrow><mi>μ</mi></mrow></math></span>) and subthreshold swing (<em>SS</em>) as well as more stable threshold voltage shift (Δ<em>V</em><sub>th</sub>). In various stress tests (bias, illumination, and thermal), parylene-passivated a-IGTO TFTs showed higher stability than bare a-IGTO TFTs toward bias stress, illumination, and high temperature. The functional groups in the parylene passivation layer modified metal-oxide bonds, facilitating carrier transport and reducing oxygen vacancies that act as charge-trapping sites at the gate dielectric/channel interface. Furthermore, a water-soaking test was conducted on the bare and parylene-passivated a-IGTO TFTs for up to 12 h, confirming stable transfer characteristics throughout the duration in parylene-passivated a-IGTO TFTs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"190 ","pages":"Article 109325"},"PeriodicalIF":4.2000,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125000629","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

A passivation layer on thin-film transistors (TFTs) plays a role in suppressing defects caused by back-channel penetration of moisture, oxygen, and various gases from the external environment.

Among passivation layer materials, polymers can be applied on flexible electronic devices and are relatively easy to fabricate. Herein, we employed parylene-N, parylene-C, and parylene-F as passivation layers on amorphous indium–gallium–tin oxide (a-IGTO) TFTs to improve their electrical characteristics and reliability. Compared to bare a-IGTO TFTs, parylene-passivated a-IGTO TFTs showed better field-effect mobilities (

μ

) and subthreshold swing (SS) as well as more stable threshold voltage shift (ΔV_th). In various stress tests (bias, illumination, and thermal), parylene-passivated a-IGTO TFTs showed higher stability than bare a-IGTO TFTs toward bias stress, illumination, and high temperature. The functional groups in the parylene passivation layer modified metal-oxide bonds, facilitating carrier transport and reducing oxygen vacancies that act as charge-trapping sites at the gate dielectric/channel interface. Furthermore, a water-soaking test was conducted on the bare and parylene-passivated a-IGTO TFTs for up to 12 h, confirming stable transfer characteristics throughout the duration in parylene-passivated a-IGTO TFTs.

查看原文本刊更多论文

求助全文

约1分钟内获得全文求助全文

来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.