Attaur Rahman , Aqsa Abid , Muhammad Haneef , Bin Amin , Yasser Elmasry
{"title":"Probing the role of silver and gold based double perovskite halide oxides for optoelectronic and photocatalytic applications","authors":"Attaur Rahman , Aqsa Abid , Muhammad Haneef , Bin Amin , Yasser Elmasry","doi":"10.1016/j.mssp.2025.109367","DOIUrl":null,"url":null,"abstract":"<div><div>Double perovskite halide oxides have shown great potential in various optoelectronic and photocatalytic applications due to their unique properties. Based on density functional theory (DFT), this study investigates the structural, mechanical, electronic, optical and photocatalytic properties of silver and gold based double perovskite halide oxides Ba<sub>2</sub>(Ag/Au)IO<sub>6</sub>. The Full-potential linearized augmented plane wave (FP-LAPW) method is used, executed in WIEN2k simulation code. The calculated structural parameters are in good agreement with the experimental results. Both these perovskite compounds exhibit the face centered cubic structure according to the Goldschmidt tolerance factor t<sub>o</sub> and octahedral factor μ<sub>o</sub> criteria of cubic structure formation. The negative values of formation enthalpy H<sub>f</sub>, the elastic properties, and mechanical properties of these compounds demonstrate their thermodynamic and mechanical stability. The band gap values of 2.30(2.07) eV for Ba<sub>2</sub>AgIO<sub>6</sub>(Ba<sub>2</sub>AuIO<sub>6</sub>) compounds are estimated by using Perovskite modified Becke-Johnson potential (P-mBJ) plus Hubbard parameter U, revealed significant agreement with the reported values. The observed reduction in the band gap of Ba<sub>2</sub>AuIO<sub>6</sub> as compared to Ba<sub>2</sub>AgIO<sub>6</sub> is due to the increase in atomic radii of Au over Ag. Furthermore, these compounds possess a direct band gap nature and exhibit promising optical behavior in ultraviolet region. The characteristic optical parameters of these compounds indicate their competency for optoelectronic applications. Moreover, the straddling of standard redox potential within the valence and conduction band edge potentials make them an excellent candidate for hydrogen production from photocatalytic water splitting.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"190 ","pages":"Article 109367"},"PeriodicalIF":4.2000,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125001040","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Double perovskite halide oxides have shown great potential in various optoelectronic and photocatalytic applications due to their unique properties. Based on density functional theory (DFT), this study investigates the structural, mechanical, electronic, optical and photocatalytic properties of silver and gold based double perovskite halide oxides Ba2(Ag/Au)IO6. The Full-potential linearized augmented plane wave (FP-LAPW) method is used, executed in WIEN2k simulation code. The calculated structural parameters are in good agreement with the experimental results. Both these perovskite compounds exhibit the face centered cubic structure according to the Goldschmidt tolerance factor to and octahedral factor μo criteria of cubic structure formation. The negative values of formation enthalpy Hf, the elastic properties, and mechanical properties of these compounds demonstrate their thermodynamic and mechanical stability. The band gap values of 2.30(2.07) eV for Ba2AgIO6(Ba2AuIO6) compounds are estimated by using Perovskite modified Becke-Johnson potential (P-mBJ) plus Hubbard parameter U, revealed significant agreement with the reported values. The observed reduction in the band gap of Ba2AuIO6 as compared to Ba2AgIO6 is due to the increase in atomic radii of Au over Ag. Furthermore, these compounds possess a direct band gap nature and exhibit promising optical behavior in ultraviolet region. The characteristic optical parameters of these compounds indicate their competency for optoelectronic applications. Moreover, the straddling of standard redox potential within the valence and conduction band edge potentials make them an excellent candidate for hydrogen production from photocatalytic water splitting.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.