Effect of TEOS layer on wafer warpage for wafer-to-wafer bonding

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-02-01 DOI:10.1016/j.microrel.2025.115591

Wei Feng , Haruo Shimamoto , Katsuya Kikuchi

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引用次数: 0

Abstract

The key enabling technology for 3D integration is Wafer-to-Wafer (WoW) bonding. One of the main issues for the W2W bonding fabrication process is the wafer warpage. We explore the possibility of wafer warpage reduction considering the large material properties variation of the tetraethoxysilane (TEOS) layer. We investigated the effect of the TEOS layer on the wafer warpage with different equipment and sources in experiments. Furthermore, the effect of the material property of TEOS as the coefficient of thermal expansion (CTE) and Young's modulus on the wafer warpage was analyzed with finite element method (FEM) simulation. We demonstrated quantitatively the variation of wafer warpage with different TEOS layers. We reveal that convex wafer warpage is beneficial for wafer deformation control, as it counteracts the concave warpage caused by the metal materials in W2W bonding. Especially with the development of multi-stacked WoW bonding process for advanced devices with complex structures, controlling the warpage of each wafer becomes more important.

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.