Magnetic-Field Orientation Dependence of Thermal Stability in Perpendicular STT-MRAM

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-12-09 DOI:10.1109/LED.2024.3513954

Zhengren Yan;Pengqi Lu;Yuyan Chu;Tao Jiang;Jinyao Li;Wei Fang;Shikun He

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引用次数: 0

Abstract

Under the influence of an external magnetic field, the macrospin model predicts that the free layer of a magnetic tunnel junction (MTJ) exhibits a minimum energy barrier when the applied field is oriented at 45°. However, recent chip-scale experiments have yielded inconsistent results, indicating the limitations of current models in accurately predicting MRAM’s magnetic immunity. In this work, we present a domain wall motion-based model that provides novel insights. By employing the small-angle approximation and linearizing the domain wall energy under the influence of a transverse magnetic field, we have derived an analytical formula that well fits the experimental data of the perpendicular STT-MRAM. Our findings indicate a minimum switching barrier occurring at a special field angle (~60°), which could be manipulated by the field strength and the magnetic properties of device. The proposed model enables a more precise quantitative assessment of magnetic immunity at the chip level and offers valuable guidance for device optimization and shielding method development.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.