Decoupled Double-Channel p-GaN Gate AlGaN/GaN HEMT Featuring Low Reverse Conduction Loss and High Forward Threshold Voltage

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-12-09 DOI:10.1109/LED.2024.3513322

Xiaotian Tang;Zhongchen Ji;Qimeng Jiang;Sen Huang;Xinguo Gao;Ke Wei;Xinhua Wang;Xinyu Liu

引用次数: 0

Abstract

A Hybrid-Source p-GaN gate Normally-OFF AlGaN/GaN HEMT is proposed and successfully fabricated, based on a decoupled double-channel structure. It mitigates the compatibility issue between the p-GaN gate and double-channel structures by decoupling the upper and lower channels through a Hybrid-Source structure. Thanks to the source-side Schottky connection to the lower channel, an extremely low reverse turn-ON voltage (-0.5 V) and a large forward threshold voltage (+3.2 V) are simultaneously achieved.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.