Back-End-of-Line Compatible HfO2/ZrO2 Superlattice Ferroelectric Capacitor With TiO2 Seed Layer for Enhanced Ferroelectricity

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-01-08 DOI:10.1109/TED.2024.3524953

Huan Liu;Dongya Li;Zhi Gong;Peiyuan Du;Fei Yu;Chengji Jin;Mengnan Ke;Xiao Yu;Yan Liu;Yue Hao;Genquan Han

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引用次数: 0

Abstract

In this study, the influence of TiO2 seed layers in ferroelectric capacitors with HfZrOx (HZO) solid-solution and HfO2/ZrO2 superlattice structures has been explored. Due to the insertion of the TiO2 seed layer, significant enhancement in ferroelectric properties and reduction in coercive field (

${E}_{\text {c}}$

) has been achieved. In addition, samples with the TiO2 seed layer exhibit decent ferroelectricity at a low crystalline annealing temperature of

$300~^{\circ }$

C, making them compatible with back-end-of-line (BEOL) processes. Especially, the HfO2/ZrO2 superlattice ferroelectric thin film with a 1-nm TiO2 seed layer exhibits outstanding remnant polarization (

$2{P}_{\text {r}}$

) of approximately

$51.4~\mu $

C/cm2 with a low

${E}_{\text {c}}$

of 0.9 MV/cm, reducing the operating voltage to 1.2 V, and demonstrating stable endurance larger than

$10^{{9}}$

cycles. This study presents a robust approach with BEOL process compatibility for enhancing both the ferroelectric properties and the reliability of future ferroelectric devices.

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.