State-Aware Multibit Write Algorithm for TiOx-Based Resistive Switching Memory Devices

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-01-08 DOI:10.1109/TED.2024.3521653

Yu Shi;Manoj Sachdev;Guo-Xing Miao

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引用次数: 0

Abstract

Multibit programming of resistive random access memory (RRAM) favors RESET as the final writing operation to mitigate the conductance drift due to fast relaxation. However, directly applying this strategy to existing multibit programming methods would substantially increase the number of programming steps. This study demonstrates that the conductance modulation of RESET is dependent on the conductance state, voltage amplitude, and pulse duration. The observed state dependence is exploited to calculate the optimal parameters of RESET (voltage amplitude and pulse time) during programming. The calculation offers more precise parameter choices compared to conventional approaches, minimizing the chances of overwriting and decreasing the programming steps needed. Compared to using conventional approaches for 4-bit encoding, the multibit programming algorithm based on the proposed approach reduces the programming steps by more than

$2.4\times $

and reduces the total RESET time by more than

$2.2\times $

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.