High-performance lateral AlGaN/GaN SBDs with multi-anode circular electrode structure

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-01-30 DOI:10.1016/j.mssp.2025.109330

Changtong Wu , Ben Cao , Hongbin Zhai , Shanjie Li , Nengtao Wu , Ling Luo , Fanyi Zeng , Guoqiang Li

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Abstract

In this work, a high power Schottky barrier diode (SBD) based on AlGaN/GaN heterojunction with multi-anode circular electrode structure (MA-SBD) is investigated. The equivalent anode perimeter design greatly reduces the anode area as well as the defects and traps in the GaN buffer layer below the anode, resulting in superior current-voltage (I-V) characteristics and outstanding reliability. Compared to the single-anode circular electrode structure SBD (SA-SBD), the MA-SBD has 68 % less area and achieves a low turn-on voltage (V_ON) of 0.45 V and a high breakdown voltage (BV) of 390 V, with a significant 29.9 % increase in current density at 3 V. In addition, MA-SBD has better temperature stability due to the low number of electrons trapped in the channel under the thermionic effect and the small variation in the ideal factor (n) and series resistance (R_S). Furthermore, the MA-SBD has the effect of reducing the current attenuation in the barrier-limited region, resulting in a V_ON that varies by only 0.01 V even after a bias test of 3600 s at a voltage of −50 V, this demonstrates an excellent long-term reliability.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.