Ruihao Zhang , Bing Wang , Zhanqiang Liu , Jinfu Zhao , Xiaoping Ren , Pengyang Wang , Liping Jiang
{"title":"Intelligent identification of material removal behavior during scratching of 4H-SiC based on acoustic emission sensing and unsupervised deep learning","authors":"Ruihao Zhang , Bing Wang , Zhanqiang Liu , Jinfu Zhao , Xiaoping Ren , Pengyang Wang , Liping Jiang","doi":"10.1016/j.mssp.2025.109358","DOIUrl":null,"url":null,"abstract":"<div><div>This research presents an intelligent methodology to identify the material removal behavior during scratching of 4H-SiC based on acoustic emission sensing and unsupervised deep learning. A dedicated high speed scratching setup is developed, and the scratching depth is adjusted to selectively activate different material removal modes of 4H-SiC during scratching process. The material removal behavior changes from ductile deformation to brittle fracture with the scratching depth increasing from 50 nm to 400 nm at a constant scratching speed of 20 m/s. To differentiate various acoustic emission sources, an unsupervised convolutional auto-encoder and <em>k</em>-mean clustering methodology is employed. One-dimensional convolutional autoencoder is used for adaptive extraction of acoustic emission signal features, while <em>k</em>-means clustering algorithm is used to analyze material removal modes and damage types based on the extracted signal characteristics. Combined with material removal characterization, the appearance of specific clusters in different scratching tests is leveraged to map acoustic emission data to machining patterns. The results show that different acoustic emission signal features exhibit varying sensitivity to the damage formation during high-speed scratching of 4H-SiC. The parameters of amplitude, energy, and count are identified as the optimal characteristic parameters for distinguishing material removal modes and damage types for 4H-SiC. The acoustic emission sensing and deep learning approach presented in this study can be used to construct a real-time nondestructive tool to characterize and monitor material removal behavior during manufacturing processes.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"190 ","pages":"Article 109358"},"PeriodicalIF":4.2000,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125000952","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This research presents an intelligent methodology to identify the material removal behavior during scratching of 4H-SiC based on acoustic emission sensing and unsupervised deep learning. A dedicated high speed scratching setup is developed, and the scratching depth is adjusted to selectively activate different material removal modes of 4H-SiC during scratching process. The material removal behavior changes from ductile deformation to brittle fracture with the scratching depth increasing from 50 nm to 400 nm at a constant scratching speed of 20 m/s. To differentiate various acoustic emission sources, an unsupervised convolutional auto-encoder and k-mean clustering methodology is employed. One-dimensional convolutional autoencoder is used for adaptive extraction of acoustic emission signal features, while k-means clustering algorithm is used to analyze material removal modes and damage types based on the extracted signal characteristics. Combined with material removal characterization, the appearance of specific clusters in different scratching tests is leveraged to map acoustic emission data to machining patterns. The results show that different acoustic emission signal features exhibit varying sensitivity to the damage formation during high-speed scratching of 4H-SiC. The parameters of amplitude, energy, and count are identified as the optimal characteristic parameters for distinguishing material removal modes and damage types for 4H-SiC. The acoustic emission sensing and deep learning approach presented in this study can be used to construct a real-time nondestructive tool to characterize and monitor material removal behavior during manufacturing processes.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.