Innovative polydopamine modified black silicon/Ag substrates for sensitive SERS detection and enhancement mechanism

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-02-05 DOI:10.1016/j.mssp.2025.109349

Haobo Wang, Wenfeng Liao, Yuxuan Li, Yuzhi Yi, Chi Yan, Hua Tong, Xiaojun Ye, Xiao Yuan, Cui Liu, Hongbo Li

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Abstract

Surface-enhanced Raman scattering (SERS) has gained recognition as a powerful analytical tool due to its exceptional sensitivity in detecting trace molecules, making it invaluable in fields such as environmental monitoring, biomedical diagnostics, and food safety. In this work, we prepared a 3D substrate by modifying black silicon (bSi) with polydopamine (PDA) and subsequently depositing Ag nanoparticles (AgNPs) on the surface. SERS measurements demonstrated that the bSi@PDA@Ag substrate exhibited great sensitivity and uniformity across a range of R6G concentrations, with characteristic peaks clearly identifiable at 10⁻⁸ M concentrations. The results indicate that the bSi@PDA@Ag substrate possesses significant potential for effective SERS detection. The mechanism of the enhanced SERS signals is investigated. The incorporation of PDA improves the adsorption capacity for R6G molecules due to the increased reactive −OH and −NH₂ groups. The density functional theory (DFT) calculations confirmed strong adsorption energies of R6G on the PDA surface, while electric field simulations illustrated localized hot-spots around the AgNPs, crucial for amplifying Raman signals.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.