Synthesizing C@MFO/CuBi with SPR effect for efficient photocatalytic degradation of tetracycline

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-02-04 DOI:10.1016/j.mssp.2025.109362

Yong Jin , Xiangyu Li , Ying Han , Lin Liu , Xupeng Chen , Jie He , Guixiang Teng , Xingang Li , Chun Zhang

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引用次数: 0

Abstract

Surface plasmon resonance can broaden the visible light absorption range of photocatalysts and enhance the separation efficiency of photogenerated electrons and holes. In this paper, a CuBi plasmonic bimetallic material deposited on carbon-coated manganese ferrite nanosheets was synthesized by the sodium borohydride reduction method. This material can degrade 50 ml of 20 mg/L TC solution to 100 % within 60 min, showing strong photocatalytic degradation ability. The degradation rate and kinetic constants of TC are 2 times and 11.58 times of that of pure carbon-coated manganese ferrite, respectively. This demonstrates that the introduction of the CuBi dual-atom surface plasmon resonance (SPR) effect can greatly enhance the photocatalytic degradation performance of the precursor materials. After 5 recoveries, the degradation performance remains basically stable, indicating good stability. DFT calculations suggest that electrons transfer from the CuBi dual atoms to manganese ferrite, which can produce more electrons for photocatalytic reactions, thereby improving its photocatalytic degradation performance.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.