Electrochemical sensing potential of novel C2N2 bilayer surface for the detection of toxic analytes

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Tayyabah Azam , Zaheer Ahmad , Sehrish Sarfaraz , Sajid Mehmood , Khurshid Ayub
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引用次数: 0

Abstract

A novel 2D carbon nitride (C2N2) bilayer surface owing two atomic layers in a unit cell with semiconducting nature is a new attraction in the adsorption of toxic pollutants and environmental remediation. In this regard, 2D crystalline (C2N2) bilayer surfaces are potential candidates for the adsorption of chemical warfare agents (phosgene, phosgene oxime and diphosgene) and volatile organic compounds (carbon disulfide, carbon oxysulfide). The complexation behavior of studied analytes on the C2N2 surface has been systematically investigated using non-covalent interactions (NCI), interaction energy, quantum theory of atoms in molecules (QTAIM), electron density difference (EDD), natural bond orbital (NBO) and frontier molecular orbital (FMO) analyses. Interaction energies lying between −6.94 kcal mol−1 to −19.51 kcal mol−1 indicate the physisorption concerning toxic analytes on the C2N2 bilayer surface. NCI and QTAIM analyses reveal that the studied pollutants are stabilized over C2N2 surface via weak van der Waals and electrostatic interactions. NCI and QTAIM analyses results are nicely correlated with the interaction energy analysis. Natural bond orbital (NBO) analysis indicates that PhO@C2N2 has the maximum value for transfer of charge, whereas COCl2@C2N2 has the least charge transfer value. EDD analysis has further verified these transfer of charge values. The electronic properties are also elaborated based on frontier molecular orbital analysis. The lowest energy gap upon complexation is calculated for COCl2@C2N2 complex with an energy gap (H-L) of 4.10 eV. Overall, the key findings might be productive for the scientific community to create an efficient electrochemical sensor using C2N2 bilayer.

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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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