Unraveling the charge carriers conduction mechanism and dielectric properties of Sm2CuMnO6 double perovskite

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-01-22 DOI:10.1016/j.mssp.2025.109313

Sk. Anirban , Rajdip Roy , Rosni Roy , Rajib Mondal , Samarendra Nath Saha , Purna Chandra Barman

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Abstract

This study investigates the dielectric relaxation and charge transport properties of Sm₂CuMnO₆ double perovskite, synthesized using the auto-combustion method. The material exhibits a monoclinic crystal structure and its charge transport mechanism follows Mott's three-dimensional variable range hopping model and the correlated barrier hopping model. Above 256.82 K, the hopping mechanism is consistent with the small polaron hopping model, with a non-adiabatic mechanism. The material shows semiconductor to metal and metal to semiconductor transitions, with transition temperatures dependent on frequency. Dielectric relaxation is observed due to grain and grain boundary contributions, with activation energy values of 0.40 eV, 0.17 eV, and 0.11 eV in high, mid, and low temperature regions, respectively. The study confirms the association between dielectric relaxations and charge transport properties, revealing the relaxor ferroelectric nature of Sm₂CuMnO₆.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.