First principles computation of exchange mechanism, radiation shielding, and physical properties of FeCu2SnX4(X=S, Se, Te): Transitions metal based chalcogenides for spintronic and energy storage system applications

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Shahzad Sohail , Muhammad Irfan , Quratul Ain , Fatma A. Ibrahim , Mohamed S. Hamdy , Shams A.M. Issa , Hesham M.H. Zakaly
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引用次数: 0

Abstract

This study explores the multifunctional properties of Cu-based FeCu2SnX4(X = S, Se, Te) through density functional theory (DFT) calculations, focusing on their ferromagnetic stability, optical behavior, and thermoelectric performance. Phonon dispersions and negative formation energy values validated the stability of the ferromagnetic phase of all the investigated spinels. Band structure analysis confirmed semiconducting characteristics for both spin channels, while exchange splitting energies obtained from the density of states (DOS) were used to calculate exchange constants (N0α and N). The strong p-d hybridization, reflected in higher N = −0.14, −0.18, and −0.16 and N = 0.11, 0.29, and 0.35, indicated that the exchange field dominates the crystal field, driving ferromagnetism. Furthermore, p-d hybridization adjusted magnetic moments at Cu and Fe sites, showcasing tunable magnetic properties. Optical analysis in the 0–6 eV photon energy range revealed low light dispersion and refractive indices of 1–2 eV within the visible spectrum, suggesting potential for optoelectronic applications. Thermoelectric studies at 500 K demonstrated positive Seebeck coefficients for FeCu₂SnS₄ and FeCu₂SnSe₄, while FeCu₂SnTe₄ showed negative coefficients at room temperature. Power factors increased with temperature from X = S to Te, highlighting their potential for thermoelectric power generation. Furthermore, the radiation shielding assessment emphasized that FeCu2SnTe4 provides an HVL of a minimum of 0.18 cm at 0.015 MeV, which clearly explains gamma-ray absorption more than other samples. This information places FeCu₂SnX₄ spinel structures as potential candidates for applications that require combined magnetic, optical, radiation shielding, and energy functionalities. These findings position FeCu₂SnX₄ spinels as promising materials for integrated magnetic, optical, radiation shielding, and energy applications.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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