First-principles investigation of the physical properties of wide band gap hexagonal AlPO4 compound for possible applications

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
A.S.M. Muhasin Reza, Md Asif Afzal, S.H. Naqib
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引用次数: 0

Abstract

AlPO4 belongs to the berlinite quartz type family and is a ternary wide band gap semiconductor. The structure of AlPO4 is hexagonal with space group 152 (P3121). In this study, using density functional theory (DFT), we have investigated the bulk physical properties (structural, electronic band structure, elastic properties, thermal properties, optical properties and bonding features) of AlPO4 compound. The optimized structural parameters are very close to previous experimental and theoretical results. The elastic constants indicate that AlPO4 is mechanically stable and brittle in nature. The compound is moderately hard and possesses a low machinability index (μM = 0.54). AlPO4 contains significant mechanical anisotropy. A positive value of tetragonal shear modulus indicates the dynamical stability of this crystal. The charge density distribution, bond population analysis, Vickers hardness, thermo-mechanical and optical properties have been investigated theoretically for the first time. The values of Pugh's ratio and Poisson's ratio revealed the brittleness of the compounds associated with strong directional covalent bonds with a mixture of ionic contributions. From the bond population analysis the bonding character is also found to be mixed with ionic and covalent characters. The thermal conductivity of the compound is low (∼0.54 W/m.K at high temperatures). The electronic band structure calculations reveal clear insulating behavior with a band gap of ∼6.0 eV. Band structure calculations were carried out without and with spin-orbit coupling (SOC) to explore possible topological signature. The energy dependent optical properties conform to the electronic band structure calculations. Major optical properties like dielectric functions, refractive index, photoconductivity, absorption coefficient, loss function and reflectivity are calculated and discussed in detail in this study. The optical anisotropy of AlPO4 is quite low. It is an efficient absorber of the ultraviolet light. In contrast, in the visible region, the reflectivity is very low (∼4 %). Possible sectors of applications of AlPO4 have been explored.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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