Spray-deposited EuOCl film for spectral shifters applications in silicon photovoltaic technology

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-01-23 DOI:10.1016/j.mssp.2025.109311

Juan José Peinado Pérez , Francisco Martín Jiménez , María Cruz López Escalante

引用次数: 0

Abstract

Rare-earth oxhyhalides have great potential due to their unique 4f electronic configuration, which provides them interesting luminescent properties. Among all the possibilities, EuOCl is attracting a lot of attention because it can be stable in divalent and trivalent states providing the possibility to manage the light emission effectively. This opens up the opportunity to apply EuOCl films as spectral shifter in silicon photovoltaic technology to improve the device output power. Our study demonstrates that it is possible to prepare EuOCl films using spray pyrolysis technique and apply them as a spectral shifter to produce an relative power output improvement of 16.8 %.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.