Unique II-scheme heterojunction polyimide/Bi2MoO6 composite photocatalyst for degradation of Tetracycline hydrochloride

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-01-28 DOI:10.1016/j.mssp.2025.109337

Yiran Chen, Min Fu, Mei Yang, Jinwu Bai, Yi Li, Meng Fang, Lu Peng

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Abstract

This study effectively built polyimide/Bi₂MoO₆(PI/BMO) heterojunction composites for the first time, utilizing tetracycline hydrochloride as the target pollutant for degradation. The photocatalytic activity of the PI/BMO composite exceeded that of the individual monomers, polyimide (PI) and Bi₂MoO₆(BMO), by 83 % and 27 %, respectively. The superior photocatalytic degradation efficacy of the PI/BMO composites was ascribed to the establishment of type II heterojunctions and an increased specific surface area. The BET results showed that the increased specific surface of PI/BMO provided more active sites to photocatalytically degrade tetracycline (TC). Trapping experiments and the EPR facility demonstrate that ·O₂⁻and h⁺ are the primary active species in the photocatalytic process. Finally, the possible pathways for photocatalytic degradation of tetracycline by the materials were analyzed by HPLC-MS. This study presents a novel organic-inorganic heterojunction composite material, which may also offer insights into addressing the growing concern of antibiotic pollution.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.