Localized electrochemical deposition manufacturing of copper microwalls based on the control of microanode movement trajectory

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-02-01 DOI:10.1016/j.mssp.2025.109350

Qixin Qing, Yanguang Huang, Ting Zhu, Dengguo Xu, Chen Wang

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Abstract

Localized electrochemical deposition (LECD) is a promising method for additive manufacturing of three-dimensional (3D) metal microstructures. This study investigated the influence of horizontal and vertical step sizes on the structure of copper microwalls deposited by LECD using a microanode with a 20 μm diameter. The structures of copper microwalls deposited under different horizontal steps were categorized into three types of deposition short-circuit contact modes—vertical short-circuit contact mode, lateral short-circuit contact mode, and mixed deposition mode—to describe the growth mechanism of microwall. These short-circuit contact mode can be changed by adjusting the vertical or horizontal step size. A compact structure and smallest width of copper microwall can only be obtained using the horizontal and vertical step sizes of 3 μm in the lateral short-circuit contact mode. Using the optimal step parameters, the minimum spacing for depositing non-merging digital microstructures composed of copper microwalls is 50 μm. This study is of great significance for 3D manufacturing of metal microstructures using LECD.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.