Adsorption and electrochemical sensing potential of C3N monolayer for hydrogen containing toxic pollutants

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Tayyabah Azam , Sehrish Sarfaraz , Tahira Sabeen , Sajid Mahmood , Ahmed Lakhani , Zaheer Ahmad , Khurshid Ayub
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引用次数: 0

Abstract

Searching for suitable surfaces for the sensing of toxic pollutants is an area of continuous interest. In this regard, nitrogen containing surfaces are potential candidates for the adsorption of hydrogen containing toxic pollutants i.e., HF, HCN, H2S, PH3 and NH3. Using interaction energy, Ab initio molecular dynamics (AIMD) simulations, quantum theory of atoms in molecules (QTAIM), electron density difference (EDD), natural bond orbital (NBO), non-covalent interactions (NCI), Energy decomposition analysis (EDA) and frontier molecular orbital (FMO) analyses, complexation behavior of the studied analytes on C3N surface has been systematically investigated. Interaction energies lying between −6.17 kcal/mol and −14.55 kcal/mol indicate the physisorption of toxic analytes on C3N surfaces. NCI and QTAIM analyses reveal that the studied pollutants are stabilized over C3N surface via weak van der Waal's and electrostatic interactions. NCI and QTAIM analyses results are nicely correlated with the interaction energy analysis. NBO analysis indicates the highest value of charge transfer in HCN@C3N whereas HF@C3N has the least charge transfer value. These charge transfer values are further verified through EDD analysis. The electronic properties are also elaborated based on frontier molecular orbital analysis. The lowest energy gap upon complexation is calculated for HF@C3N complex with energy gap (H-L) of 0.93 eV. Overall, the key findings might be productive for the scientific community to create an efficient electrochemical sensor using C3N monolayer.

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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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