SnSb monolayer: A promising 2D candidate for high sensitivity NO2 gas sensing

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-01-30 DOI:10.1016/j.mssp.2025.109318

Tuan V. Vu , Thi H. Ho , Duc-Quang Hoang , Hoang Van Chi , Khang D. Pham

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引用次数: 0

Abstract

Data regarding the adsorption-sensing characteristics of two-dimensional (2D) materials are crucial for guiding their design and use in gas sensors. XSb (X = Si, Ge, Sn) are novel 2D materials anticipated to exhibit thermodynamic stability and have the potential for experimental production. Nevertheless, the adsorption-sensing characteristics of XSb (X = Si, Ge, Sn) monolayers have not been thoroughly examined until now. This study employs density functional theory (DFT) and non-equilibrium Green’s Function (NEGF) approaches to systematically investigate the structural, electrical, and adsorption-sensing properties of XSb (X = Si, Ge, Sn) monolayers for gas molecules H

_{2}

O, CO, SO

_{2}

, and NO

_{2}

. This work provides a novel analysis of the adsorption-sensing characteristics of 2D XSb (X = Si, Ge, Sn) materials and offers recommendations for developing NO

_{2}

gas sensors utilizing these materials. Specifically, our findings suggest that the SnSb monolayer is a promising 2D sensor material for detecting NO

_{2}

gas with high sensitivity.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.