Efficient hydrogen production from glycerol over novel NiO/TNWs/rGO photocatalysts

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Lulu Wang , Ke Chen , Cong Yin , Xiaojuan Qin , Zhiwei Zhou , Hui Xie , Wenliang Wu
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引用次数: 0

Abstract

The novel NiO/TNWs/rGO ternary heterojunction photocatalyst, which demonstrates excellent photocatalytic hydrogen production from glycerol, was successfully designed and synthesized for the first time using a simple hydrothermal and alkaline photodeposition method. The structures and photoelectrochemical properties of the prepared photocatalysts were analyzed through various characterization techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), nitrogen adsorption-desorption, X-ray photoelectron spectroscopy (XPS), transmission electron microscopy with energy-dispersive X-ray spectroscopy (TEM-EDX), UV–visible diffuse reflectance spectroscopy (UV–vis DRS), photoluminescence (PL), and electrochemical impedance spectroscopy (EIS). The N0.8T1G0.04 sample, which was created by uniformly depositing TNWs on the partially reduced graphene oxide (rGO) surface, resulting in a high dispersion of NiO, exhibited the lowest PL intensity, a minimum bandgap energy of 1.53 eV, and the smallest EIS arc radius. This sample demonstrated the highest photocatalytic hydrogen production efficiency from glycerol, achieving 386.32 μmol g−1 h−1, without any change in the structure and morphology based on the XRD and SEM characterization resulting in the promising photocatalytic stability over six repeated uses. This performance is approximately 15.3 and 5.1 times greater than that of pure TNWs and rGO samples, respectively, due to the synergistic effect of the NiO/TNWs/rGO ternary heterojunction. This study explores the preparation, characterization, and application of specific NiO/TNWs/rGO photocatalysts, aiming to provide guidance and insights for the green and clean production of hydrogen resources.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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