Unleashing the potential of binder-free manganese cobalt oxide films for high performance asymmetric supercapacitor application

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
R.S. Redekar, K.V. Patil, N.L. Tarwal
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Abstract

In the present study, a vertical hydrothermal reactor is used to deposit MnCo2O4 (MCO) nanoflakes on Ni-foam at different reaction time. The deposited MCO films are studied by a series of different characterizations. The polycrystalline nature of MCO films is observed through XRD and HR-TEM analysis, while the FT-IR study has confirmed the functional bonding in MCO samples. The distribution of elements and their oxidation state in MCO films are analyzed by EDAX mapping and XPS study. The growth of the nanoflake structure on the Ni-foam is observed by SEM and TEM analysis. It is observed that the MCO film deposited at 6 h reaction time exhibited better structural and morphological properties. Further, the highest surface area of 37 m2/g with a mesoporous nature is exhibited by the MCO-3 sample. Interestingly, MCO-3 film exhibits better structural stability and mesoporous characteristics, as evidenced by its maximum specific capacitance at 1 mA/cm2 of 738 F/g. Additionally, MCO-3 film has shown a good cycling stability of 94.2 % over 5000 cycles. Promising performance metrics, including a specific energy density of 35.7 Wh/kg and a power density of 208.3 W/kg, are exhibited by the fabricated asymmetric device. Notably, excellent cycling stability is demonstrated by the device, with 91.6 % of its initial capacitance retained after 5000 cycles while maintaining a high Coulombic efficiency at 95.4 %. These outcomes underscore the significant potential of MnCo2O4-based binder-less films for advance supercapacitors.

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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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