PbSe sensitized with iodine and oxygen for high-performance photoelectronic detection

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-01-30 DOI:10.1016/j.mssp.2025.109327

Dahai Gao, Yongqi Li, Bohong Liu, Yitong Liu, Shiwei Yuan, Zhongyang Wang, Wenran Feng

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引用次数: 0

Abstract

Deposition and sensitization are among the most essential processes for PbSe, particularly in infrared detections applications. Nonetheless, the conventional sensitization process utilizing a single sensitizer has encountered issues related to subpar performance. In this study, PbSe films were synthesized via chemical bath deposition (CBD) and were later sensitized with various sensitizers, specifically oxygen and iodine. The impacts of these sensitizers on the films’ structural and photoelectronic properties were examined. Structural analyses confirmed the formation of Pb₃O₂I₂ during the sensitization. It is believed that the p-n junction established between the PbSe and the lead-iodine-oxgen compounds significantly enhances the photoelectronic performance. The co-sensitized films, which utilized a mixture of iodine and oxygen, exhibited optimal performance, achieving a detectivity of 1.35 × 10⁹ Jones and a responsivity of 814 mA/W. Meanwhile, the light-dark current ratio peaked at 7.3, which is 3.5 times higher than that of the film sensitized solely with oxygen. The co-sensitization technique is characterized by a reduced duration and lower temperature, proving to be a viable and cost-effective approach for developing high-performance infrared PbSe devices.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.