Improving cell current in 3D NAND flash memory with fixed oxide charge

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-01-23 DOI:10.1016/j.sse.2025.109072

Yeeun Kim , Jaejoong Jeong , Seul Ki Hong , Byung Jin Cho , Jong Kyung Park

引用次数: 0

Abstract

This paper addresses the challenge of declining cell current in 3D NAND Flash memory. We propose a novel approach to deposit a positive fixed oxide charge on the backside adjacent to the filler oxide after forming a poly-Si channel, effectively improving the cell current flow within the entire string. Through TCAD simulations and experimental device fabrication, we demonstrate a significant enhancement in cell current by approximately 30%. Furthermore, we analyze the impact of positive fixed charge on channel current and investigate the influence of Poly-Si channel thickness and liner oxide thickness on current improvement. Our findings indicate promising avenues for improving 3D NAND Flash memory technology, contributing to its continued advancement in the future.

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提高固定氧化物电荷的3D NAND闪存的电池电流

本文讨论了3D NAND闪存中电池电流下降的问题。我们提出了一种新的方法，在形成多晶硅通道后，在靠近填料氧化物的背面沉积一个正的固定氧化物电荷，有效地改善了整个管柱内的电池电流。通过TCAD模拟和实验器件制造，我们证明了电池电流显著提高了约30%。此外，我们还分析了正电荷对沟道电流的影响，并研究了多晶硅沟道厚度和衬里氧化物厚度对电流改善的影响。我们的研究结果为改进3D NAND闪存技术指明了有希望的途径，有助于其在未来的持续发展。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.