Improving cell current in 3D NAND flash memory with fixed oxide charge

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-01-23 DOI:10.1016/j.sse.2025.109072

Yeeun Kim , Jaejoong Jeong , Seul Ki Hong , Byung Jin Cho , Jong Kyung Park

引用次数: 0

Abstract

This paper addresses the challenge of declining cell current in 3D NAND Flash memory. We propose a novel approach to deposit a positive fixed oxide charge on the backside adjacent to the filler oxide after forming a poly-Si channel, effectively improving the cell current flow within the entire string. Through TCAD simulations and experimental device fabrication, we demonstrate a significant enhancement in cell current by approximately 30%. Furthermore, we analyze the impact of positive fixed charge on channel current and investigate the influence of Poly-Si channel thickness and liner oxide thickness on current improvement. Our findings indicate promising avenues for improving 3D NAND Flash memory technology, contributing to its continued advancement in the future.

查看原文本刊更多论文

求助全文

约1分钟内获得全文求助全文

来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.