First-principles calculations to investigate the impact of hydrostatic pressure on the physical properties of LiXCl3 (X = Be, Mg) chloroperovskites: An insight for optoelectronics application
IF 4.2 3区 工程技术Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Md. Tanvir Hossain , Fatema-Tuz- Zahra , Md. Rasidul Islam , Sohail Ahmad
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引用次数: 0
Abstract
External pressure significantly alters the physical properties of inorganic halide perovskites, providing the way for the mass production of several optoelectronic elements. This work evaluates the effects of pressure on the mechanical, optical, structural, electrical, phonon, and thermal attributes of LiXCl3 (X = Be, Mg) perovskites using density functional theory (DFT). LiBeCl3 and LiMgCl3 are structurally and thermodynamically stable between 0 and 200 GPa, based on the formation enthalpy and Born stability criteria. LiBeCl3 and LiMgCl3 both have a positive phonon response, indicating their dynamic stability. Under applied pressure, LiXCl3 (X = Be, Mg) possesses an adjustable band gap in the spectrum of visible light, making it a good candidate for a solar cell absorber surface. LiMgCl3, an indirect band gap semiconductor, exhibits an intriguing behavior whereby it transforms into a direct band gap semiconductor upon application of 150 GPa of pressure. The electronic condition is represented by the partial density of states (PDOS); however, its intensity changes with pressure. It is notably attributed to Cl-3p in the valence band (VB) and Li-2p in the conduction band (CB). According to the calculated refractive index and static real component of the dielectric function, pressurized LiXCl3 (where X = Be, Mg) is suitable for photonics. Ultraviolet scanners can benefit from their great absorption and low reflection at elevated energies under pressure. Increased pressure causes increased elastic constants, ductility, hardness, elastic moduli, and anisotropy. Furthermore, pressure-induced modifications to mechanical features have potential uses in adaptive electronic devices, structural design, and many other fields.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
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Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.