{"title":"Enhanced adsorption of CO on B, N, Ni co-doped graphene: A first-principles study","authors":"Liuxu Zhao, Yutong Zou, Yaqi She, Chunlei Kou, Miao Zhang, Yuanye Tian","doi":"10.1016/j.mssp.2025.109307","DOIUrl":null,"url":null,"abstract":"<div><div>With the increasingly serious environmental pollution, it is of great significance for gas sensors to detect and adsorb harmful gases. Doping modified graphene as a toxic gas sensor has been widely studied in recent years. The adsorptions of B-doped graphene (B-G), N-doped graphene (N-G), Ni-doped graphene (Ni-G), B-Ni co-doped graphene (B-Ni-G), and N-Ni co-doped graphene (N-Ni-G) toward the toxic gas CO have been studied using first-principles calculations. The adsorption configuration, charge transfer, electronic properties, sensitivity and recovery time of CO on single doped graphene systems and co-doped graphene systems are discussed in detail. It is found that CO is weakly adsorbed on B-G and N-G with a high adsorption energy, while Ni-G has a relatively enhanced adsorption energy toward CO. Compared to single doped graphene, N-Ni-G exhibits stronger adsorption toward CO with lower adsorption energy than other substrates. The results show that CO adsorption on the co-doped graphene can enhance the conductivity of the structure due to the change of electronic properties. The theoretical recovery time is also calculated to estimate the reusability of the substrate in gas sensing. The N-Ni-G exhibits stronger interaction with CO than B-Ni-G, and N-Ni-G (ortho) is more likely to serve as a promising and efficient CO gas sensing material.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"189 ","pages":"Article 109307"},"PeriodicalIF":4.2000,"publicationDate":"2025-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125000447","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
With the increasingly serious environmental pollution, it is of great significance for gas sensors to detect and adsorb harmful gases. Doping modified graphene as a toxic gas sensor has been widely studied in recent years. The adsorptions of B-doped graphene (B-G), N-doped graphene (N-G), Ni-doped graphene (Ni-G), B-Ni co-doped graphene (B-Ni-G), and N-Ni co-doped graphene (N-Ni-G) toward the toxic gas CO have been studied using first-principles calculations. The adsorption configuration, charge transfer, electronic properties, sensitivity and recovery time of CO on single doped graphene systems and co-doped graphene systems are discussed in detail. It is found that CO is weakly adsorbed on B-G and N-G with a high adsorption energy, while Ni-G has a relatively enhanced adsorption energy toward CO. Compared to single doped graphene, N-Ni-G exhibits stronger adsorption toward CO with lower adsorption energy than other substrates. The results show that CO adsorption on the co-doped graphene can enhance the conductivity of the structure due to the change of electronic properties. The theoretical recovery time is also calculated to estimate the reusability of the substrate in gas sensing. The N-Ni-G exhibits stronger interaction with CO than B-Ni-G, and N-Ni-G (ortho) is more likely to serve as a promising and efficient CO gas sensing material.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.