Purusottam Reddy B , Aboud A.A. Bahajjaj , Jayanth Babu Karnam , Chandra Sekhar M , Youngsuk Suh , Si-Hyun Park
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引用次数: 0
Abstract
Developing highly efficient and durable bifunctional electrocatalysts for water splitting largely depends on creating multicomponent coupled interfaces. Transition metal sulfides are commonly used as efficient catalysts; however, creating strong coupling interfaces to improve their electrocatalytic performance presents a considerable challenge. Herein, we present prussian blue analogue derived carbon-rich cobalt-iron disulfide (C@CoS₂@FeS₂) nanocomposites employing different post-sulfurization temperatures as bifunctional catalysts for water splitting. Experimental results demonstrated that the synergistic interaction between C and CoS₂@FeS₂, high degree of defects and optimized electronic structure of heterogeneous interfaces, enhances conductivity, catalytic activity and ensures long-term durability. Consequently, the C@CoS₂@FeS₂ nanocomposites sulfurized at 500 °C exhibited outstanding catalytic properties with overpotentials of 303 mV at 50 mA cm−2 for oxygen evolution reaction (OER) and 138 mV at 20 mA cm−2 for hydrogen evolution reaction (HER). Notably, the assembled C@CoS₂@FeS₂ ||C@CoS₂@FeS₂ electrolyzer system only requires 1.829 V at 50 mA cm−2 in 1 M KOH and maintaining stability for 10 h. These findings indicate that the C@CoS₂@FeS₂-500 catalyst could be an efficient and cost-effective option for water-splitting technologies.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
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Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.