Demonstration of bipolar resistance switching characteristics of sol-gel derived BaOx resistive memory

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-01-18 DOI:10.1016/j.mssp.2025.109297

Chih-Chieh Hsu , Zong-Lin Cai , Min-Yi Hsu , Wun-Ciang Jhang , Sungjun Kim

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Abstract

Resistance switching (RS) characteristics of Ba-related compounds such as BaTiO_x and BaZrO_x have been widely reported in literature. However, resistive random-access memory (RRAM) fabricated using a BaO_x film as an RS layer is still unexplored. In this article, we use a sol-gel derived BaO_x RS layer to realize a Cu/BaO_x/n⁺-Si bipolar RRAM. The RS behavior is highly sensitive to annealing temperature of the BaO_x film. The as-fabricated BaO_x device shows a superior insulation property with a breakdown voltage of ∼45 V, and RS behavior is not observed. Nevertheless, for the device fabricated using 300 °C-annealed BaO_x film as the RS layer, significant bipolar RS feature with write and erase voltages of 4.8 and −1.58 V can be obtained. In addition, the RRAM exhibits a memory window of 10⁶, which is larger than those of bipolar RRAMs reported recently. Resistance switching mechanism and carrier transport behavior are investigated and evidenced by I-V measurement, curve analysis, and material analyses. Stability and read-disturb immunity at 25 and 85 °C are examined. Erase and write speeds are also explored.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.