High-yield CsPbBr3 quantum dots via microfluidic technology for photodetectors

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-01-15 DOI:10.1016/j.mssp.2025.109290

Jia Guo , Yujie Yuan , Jian Ni , Jinlian Bi , Yuhan Deng , Rufeng Wang , Shuai Zhang , Hongkun Cai , Jianjun Zhang

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引用次数: 0

Abstract

Cesium lead halide perovskite quantum dots (CLHP QDs) are well-known for their high stability and excellent charge-carrier mobility. However, the commercialization of perovskite quantum dots (QDs) is limited by the challenges associated with scaling up production using many synthesis methods. In this work, microfluidic technology was utilized to synthesize CsPbBr₃ QDs in air, achieving a yield greater than 45 %. Additionally, the synthesized CsPbBr₃ QDs were applied to photodetectors (PDs). The results indicate that increased QD size reduces carrier recombination and enhances electronic coupling between the inter-nanocrystals (NCs), increasing carrier transport capacity and diffusion efficiency. The specific detectivity (

D^{*}

) of the PDs can reach 10¹², demonstrating excellent weak-light detection ability.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.