Investigation of DC and low frequency noise parameters of junctionless GAA Si VNW pMOSFETs in the temperature range from 80 K to 340 K

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-01-22 DOI:10.1016/j.sse.2025.109068

A. Tahiat , B. Cretu , A. Veloso , E. Simoen

引用次数: 0

Abstract

In this article, the performance of vertical nanowire Gate All Around (GAA) junction-less pMOSFETs on SOI having an asymmetric architecture was investigated experimentally based on an in-depth study of their electrical characteristics. Current-voltage I-V characteristics in linear operation regime in forward and reverse operation modes are analyzed in a wide range of temperatures from 80 K up to 340 K. In addition to that Low Frequency Noise (LFN) was also studied as a function of the temperature. The main DC and LFN results are presented, showing unusual low field mobility degradation and LFN enhancement for lower temperatures. A correlation was found between the low field mobility degradation and the low frequency noise increasing at low temperature operation, suggesting a strong impact of coulomb scattering on both parameters at low temperatures.

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80k ~ 340k温度范围内无结GAA Si VNW pmosfet直流和低频噪声参数的研究

本文在深入研究非对称结构SOI上的垂直纳米线栅极（GAA）无结pmosfet的电特性的基础上，对其性能进行了实验研究。在80 K到340 K的宽温度范围内，分析了正向和反向工作模式下线性工作状态下的电流-电压I-V特性。此外，还研究了低频噪声（LFN）与温度的关系。给出了直流和LFN的主要结果，显示了不同寻常的低场迁移率退化和低温下LFN的增强。低温下，低场迁移率下降与低频噪声增加之间存在相关性，表明低温下库仑散射对这两个参数都有很强的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.