Si/Ge1−xSnx/Si transistors with highly transparent Al contacts

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-01-27 DOI:10.1016/j.sse.2025.109069

Lukas Wind , Stefan Preiß , Daniele Nazzari , Johannes Aberl , Enrique Prado Navarrete , Moritz Brehm , Lilian Vogl , Andrew M. Minor , Masiar Sistani , Walter M. Weber

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引用次数: 0

Abstract

We study the monolithic quasi-ohmic contact formation with single-elementary Al to Ge

_{1 - x}

_{x}

channel devices with various Sn concentrations between 0.5 % and 4 %. Thereby we investigate the influence of increasing Sn content on the electrical transport properties in field-effect transistors for a wide temperature range between 77 K and 400 K. At low temperatures, the devices exhibit improved performance metrics, promising for cryo-CMOS applications. Compared to pure Ge control devices, the introduction of Sn into the channel leads to a 20 times increased on-current. In a multi-gate architecture, we analyze the decoupled influence of the carrier injection through the metal–semiconductor junction and the channel conduction.

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具有高透明Al触点的Si/Ge1−xSnx/Si晶体管

我们研究了单元素Al - Ge1 - xSnx通道器件在不同Sn浓度（0.5% ~ 4%）下的单元素Al - Ge1 - xSnx通道器件的单片准欧姆接触形成。因此，我们研究了在77k到400k的宽温度范围内，增加Sn含量对场效应晶体管电输运特性的影响。在低温下，该器件表现出更好的性能指标，有望用于低温cmos应用。与纯Ge控制器件相比，在通道中引入Sn导致导通电流增加20倍。在多栅极结构中，我们分析了载流子注入通过金属半导体结和通道传导的去耦影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.