Effect of UV/ozone treatment in chemical cleaning procedure on photoemission performance of GaAs and GaN photocathodes

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-01-17 DOI:10.1016/j.mssp.2025.109294

Jian Liu , Yijun Zhang , Cheng Feng , Shuai Cheng , Rongsheng Zhu

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引用次数: 0

Abstract

To obtain a cleaner surface and enhance the photoemission performance of III-V photocathode, a comparative study of cleaning procedure using acidic solutions and UV/Ozone treatment, respectively, is investigated in GaAs and GaN photocathodes. The subsequent heat treatment and activation are carried out and the quantum efficiencies of GaAs and GaN photocathodes taking the different cleaning methods are compared. The results show that the quantum efficiency of GaN photocathodes with UV/Ozone treatment can be higher than using acidic solutions, while for GaAs photocathodes, the results are completely different. By using X-ray photoelectron spectroscopy analysis, we summarize the characteristics of these treatments, trying to find the function mechanism. The XPS spectra show that UV/Ozone treatment can effectively restrain carbon contaminations of these photocathodes. But the strong oxidizing properties of UV/Ozone treatment on GaAs surface leads to the generation of more oxides, and even the high-temperature heating cannot remove them. Conversely, no additional oxidation of GaN by UV/Ozone treatment is observed, and the reduced carbon contamination results in an increase of quantum efficiency of the GaN photocathode.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.