Min Hu , Yifan Zhao , Dongcheng Li , Yanqing Zhu , Mi Xu , Jianfeng Lu , Kan Liu
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引用次数: 0
Abstract
Metal halide perovskites have obtained efficiency more than 26% when applied in small area solar cells, yet maintaining efficiency and stability while scaling area remains a challenge. Anti-solvent treatment is a simple and reliable method to fabricate high quality perovskite films in the lab. However, most of anti-solvents used for larger area perovskite films are toxic halogenated solvent and the studies on green anti-solvent are rare. Herein, we scrutinize the choice of green anti-solvent in the fabrication of larger-area perovskite films for solar modules by examining their intrinsic properties. We choose three green anti-solvents with stepwise change of saturation vapor pressures and boiling points, i.e. ethyl acetate, trifluorotoluene, and anisole to study their impact to the perovskite film morphology, optoelectronic properties, and device performance. We find that perovskite films made with trifluorotoluene having a moderate saturation vapor pressure and boiling point present a more compact morphology, a longer carrier lifetime, and a better performance when assembled in cm-size solar cells and modules. As a result, we achieve champion efficiencies of 19.3% and 18.0% with mask areas of 1.0 cm2 and 10.0 cm2 under AM 1.5G illumination. Moreover, the non-encapsulated devices retained more than 95% of their initial efficiencies after 500 h at ambient condition (ISOS-D-1). These results provide a simple and reproducible procedure for perovskite solar module fabrication in the lab.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.