A review of state of the art fabrication approaches for efficiency improvement in ultra-violet region light emitting diodes

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-01-13 DOI:10.1016/j.mssp.2025.109270

Indrani Mazumder , Kashish Sapra , Ashok Chauhan , Manish Mathew , Kuldip Singh

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引用次数: 0

Abstract

This article addresses the significant methodology adopted for fabrication of Ultra Violet light emitting Diodes (UV LED) in two different configurations termed as top-emitting and bottom-emitting along-with the constraints identified in reaching higher extraction efficiency in UV LEDs. Light emitters in the 200 nm to 400 nm wavelength range are considered to be optimally developed using the Al_xIn_yGa_(1-x-y)N alloy because of its wide band gap, suitable doping possibilities, and compatibility with existing visible light emitting technologies. Al_xIn_yGa_(1-x-y)N-based UV LEDs are becoming a popular alternative to traditional mercury-based light emitters due to their compactness and severely less ecological contamination. UV LEDs suffer from inadequate external quantum efficiency due to insufficient internal quantum efficiency and unsatisfactory light extraction efficiency. Lower efficiency is a result of a combination of factors such as metal-semiconductor junction, carrier transport, light absorption, flip-chip technology and substrate thermal conductivity. The research explains the causes of lower efficiency and accumulates existing technologies adopted for efficiency improvement. To obtain high efficiency UV light emitters including micro-LED, it is important to address potential issues and possible solutions. This pathfinder survey outlines the current state of emitters with their market stake, signifying major bottlenecks and introducing platform for future endeavours.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.