Micro-nano scaled copper nanowire: Deposited with meniscus-confined electrodeposition

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-01-15 DOI:10.1016/j.mssp.2025.109272

Gangchang Hu, Jinlian Bi, Wei Li, Yujie Yuan, Yupeng Xing

引用次数: 0

Abstract

Traditional high-temperature soldering, applied to interconnections of solar cells, usually induces thermo-mechanical stress. Metal interconnection via meniscus-confined electrodeposition (MCED) was performed at room temperature. However, it is limited by slow electrodeposition (printing) rate. In this work, the metal printing rate was enhanced by a new MCED system. The printing rate was increased from 507.6 μm³/s to 624.0 μm³/s by adjusting the initial meniscus height (IMH). Besides, porous materials were applied to stabilize the meniscus, helping improve the morphology of the printed Cu pillars. Cu pillars with different tilt angles and sizes were prepared with a high printing rate. Finally, a Cu bridge was successfully printed with the new MCED system, which would be applied to solar cells and module interconnections.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.