A Low-Noise High-Photon Detection Efficiency Silicon Photomultiplier in 0.11-μm CMOS

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-01-16 DOI:10.1109/TED.2024.3520533

Nicola D’Ascenzo;Jingbin Chen;Hui Lao;Daniele Passaretti;Emanuele Antonecchia;Yuexuan Hua;Yuqing Liu;Rui Zheng;Qingguo Xie

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引用次数: 0

Abstract

Silicon photomultipliers (SiPMs) fabricated using standard CMOS processes offer the advantages of compatibility with on-chip digital circuits, making them promising candidates among low-photon flux sensors. However, the high noise and low-photon detection efficiency (PDE) of CMOS SiPMs have limited their widespread adoption. Here, we present a novel SiPM obtained within a standard 0.11-

$\mu $

m CMOS process. We report how guard ring (GR) width and distance from shallow trench isolation (STI) may affect the noise performance, and we optimize for them. The final device demonstrates performance that is competitive with both custom-based commercial technologies and other CMOS-based SiPMs, featuring an unprecedented peak PDE of 62% at 420 nm, a dark count rate (DCR) of

$\mathbf {\text {(}{174}\pm {7}\text {)}}$

kcps/mm

$\mathbf {^{{2}}}$

, a gain of

$\mathbf {\text {(}{2}.{0}\pm {0}.{2}\text {)}\times {10}^{{6}}}$

and a single-photon time resolution (SPTR) of

$\mathbf {\text {(}{74}\pm {3} \text {)}}$

ps [full width at half maximum (FWHM)] at an excess bias voltage of 3 V.

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.