Development of New Sustainable Near-UV Photodetector Devices Based on Polymer/ZnO NR Heterojunctions With Improved Responsivity

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-01-01 DOI:10.1109/TED.2024.3520547

Marwa Belhaj;Elyes Bel Hadj Jrad;Jan Grym;Roman Yatskiv;Chérif Dridi

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引用次数: 0

Abstract

This article presents a convenient method for fabricating hybrid heterojunctions using poly (N-vinylcarbazole) (PVK) and a 1-D zinc oxide nanorod (ZnO NR) array for photodetector (PD) development. In this context, PVK and ZnO NRs were employed as electron donor and acceptor, respectively. First, ZnO NRs were hydrothermally synthesized through a two-step procedure at low temperatures on an n-type silicon substrate. Ohmic contacts were integrated by incorporating graphite and eutectic In-Ga (eGaIn) in to the PVK film and Si substrate, respectively. The eGaIn/Si/ZnO NRs/PVK/graphite PD structures’ fundamental electrical parameters were extracted from the I–V response in dark and under illumination conditions. It was found that the device displayed remarkable sensitivity to ultraviolet (UV) light exposure, owing to a responsivity of 35 mA

$\cdot $

$^{-{1}}$

, with notable reproducibility. What is more, the structure demonstrates an open-circuit voltage, short-circuit current density, and ideality factor of 0.28 V,

$237.2~\mu $

$\cdot $

$^{-{2}}$

, and 2.3, respectively. The origin of the ZnO/PVK photoconductive properties is explained using the carrier transport mechanism at the interfaces. Moreover, the photoelectrical parameters of the PVK/ZnO NR structure were precisely evaluated through a combined physical-mathematical–numerical approach to unravel the physical mechanisms governing the operation of such PDs. The results of this research reveal promising avenues for flexible and highly sensitive PDs, opening wide potential applications in advanced communication systems, and/or environmental monitoring.

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.