Jingwen Chen;Claire Qing-Ying Huang;Xin Zhang;Sheng Dong;Xiye Yang
{"title":"A Trap-Assisted Photomultiplication-Type Organic Photodetector With High Detectivity From Visible to Shortwave Infrared Light","authors":"Jingwen Chen;Claire Qing-Ying Huang;Xin Zhang;Sheng Dong;Xiye Yang","doi":"10.1109/JEDS.2024.3523394","DOIUrl":null,"url":null,"abstract":"This letter reports a trap-assisted photomultiplication-type organic photodetector (PM-OPD) with a broad sensing range from 400 to 1400 nm. By easily tunning the donor/acceptor ratio in bulk-heterojunction layer consisting Poly([2,6’-4,8-di(5-ethylhexylthienyl)benzo[1,2-b;3,3-b]dithiophene]{3-fluoro-2[(2-ethylhexyl)carbonyl] thieno[3,4-b]thiophenediyl}) (PTB7-Th) and a novel non-fullerene acceptor (NFA) pendant 2,2’-(((2,5-bis(2-octyldodecyl)-3,6-dioxo-2,3,5,6-tetrahydropyrrolo [3,4-c]pyrrole-1,4-diyl)bis(thiophene-5,2-diyl))bis(4-oxonaphthalene-3(4H)-yl-1(4H)-ylidene)) dimalononitrile named DPP-QC, the device shows specifically a high external quantum efficiency (EQE) value of 112% and specific detectivity (D*) over <inline-formula> <tex-math>$10^{10}$ </tex-math></inline-formula> Jones at 1200 nm at a light intensity of 0.108 mW/cm2. Meanwhile the PM-OPD shows ultra-fast response time <inline-formula> <tex-math>$t_{r}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$t_{f}$ </tex-math></inline-formula> of 4.1 <inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>s and 4.3 <inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>s on microsecond (<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>s) scale. Our work proves that PM-type shortwave infrared (SWIR) OPD can simultaneously achieve high responsivity, broad-spectral response, fast response and well photodiode characteristics.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"13 ","pages":"73-78"},"PeriodicalIF":2.0000,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10816666","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10816666/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This letter reports a trap-assisted photomultiplication-type organic photodetector (PM-OPD) with a broad sensing range from 400 to 1400 nm. By easily tunning the donor/acceptor ratio in bulk-heterojunction layer consisting Poly([2,6’-4,8-di(5-ethylhexylthienyl)benzo[1,2-b;3,3-b]dithiophene]{3-fluoro-2[(2-ethylhexyl)carbonyl] thieno[3,4-b]thiophenediyl}) (PTB7-Th) and a novel non-fullerene acceptor (NFA) pendant 2,2’-(((2,5-bis(2-octyldodecyl)-3,6-dioxo-2,3,5,6-tetrahydropyrrolo [3,4-c]pyrrole-1,4-diyl)bis(thiophene-5,2-diyl))bis(4-oxonaphthalene-3(4H)-yl-1(4H)-ylidene)) dimalononitrile named DPP-QC, the device shows specifically a high external quantum efficiency (EQE) value of 112% and specific detectivity (D*) over $10^{10}$ Jones at 1200 nm at a light intensity of 0.108 mW/cm2. Meanwhile the PM-OPD shows ultra-fast response time $t_{r}$ and $t_{f}$ of 4.1 $\mu $ s and 4.3 $\mu $ s on microsecond ($\mu $ s) scale. Our work proves that PM-type shortwave infrared (SWIR) OPD can simultaneously achieve high responsivity, broad-spectral response, fast response and well photodiode characteristics.
期刊介绍:
The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.