A Trap-Assisted Photomultiplication-Type Organic Photodetector With High Detectivity From Visible to Shortwave Infrared Light

IF 2.4 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-12-27 DOI:10.1109/JEDS.2024.3523394

Jingwen Chen;Claire Qing-Ying Huang;Xin Zhang;Sheng Dong;Xiye Yang

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引用次数: 0

Abstract

This letter reports a trap-assisted photomultiplication-type organic photodetector (PM-OPD) with a broad sensing range from 400 to 1400 nm. By easily tunning the donor/acceptor ratio in bulk-heterojunction layer consisting Poly([2,6’-4,8-di(5-ethylhexylthienyl)benzo[1,2-b;3,3-b]dithiophene]{3-fluoro-2[(2-ethylhexyl)carbonyl] thieno[3,4-b]thiophenediyl}) (PTB7-Th) and a novel non-fullerene acceptor (NFA) pendant 2,2’-(((2,5-bis(2-octyldodecyl)-3,6-dioxo-2,3,5,6-tetrahydropyrrolo [3,4-c]pyrrole-1,4-diyl)bis(thiophene-5,2-diyl))bis(4-oxonaphthalene-3(4H)-yl-1(4H)-ylidene)) dimalononitrile named DPP-QC, the device shows specifically a high external quantum efficiency (EQE) value of 112% and specific detectivity (D*) over

$10^{10}$

Jones at 1200 nm at a light intensity of 0.108 mW/cm2. Meanwhile the PM-OPD shows ultra-fast response time

$t_{r}$

and

$t_{f}$

of 4.1

$\mu $

s and 4.3

$\mu $

s on microsecond (

$\mu $

s) scale. Our work proves that PM-type shortwave infrared (SWIR) OPD can simultaneously achieve high responsivity, broad-spectral response, fast response and well photodiode characteristics.

查看原文本刊更多论文

一种从可见光到短波红外光具有高探测率的陷阱辅助光电倍增型有机光电探测器

这封信报告了一种陷阱辅助光电倍增型有机光电探测器（PM-OPD），具有400至1400 nm的宽传感范围。通过调节由聚([2,6 ' -4,8-二（5-乙基己基噻吩基）苯并[1,2-b;3,3-b]二噻吩]{3-氟-2[（2-乙基己基）羰基]噻吩[3,4-b]噻吩二基}（PTB7-Th）和新型非富勒烯受体（NFA）悬垂物2,2 ' -（（2,5-二（2-辛基十二烷基）-3,6-二氧基-2,3,5,6-四氢吡咯[3,4-c]吡咯-1,4-二基）双（噻吩-5,2-二基））双(4-氧萘-3（4H)-基-1(4H)-乙基）二丙二腈组成的体-异质结层中的供体/受体比例，命名为DPP-QC，该器件在1200nm光强为0.108 mW/cm2时的外量子效率（EQE）值高达112%，比探测率（D*）超过$10^{10}$ Jones。同时，PM-OPD的响应时间$t_{r}$和$t_{f}$在微秒（$\mu $ s）尺度上分别为4.1 $\mu $ s和4.3 $\mu $ s。我们的工作证明，pm型短波红外（SWIR） OPD可以同时实现高响应性、广谱响应、快速响应和良好的光电二极管特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.