A Trap-Assisted Photomultiplication-Type Organic Photodetector With High Detectivity From Visible to Shortwave Infrared Light

IF 2 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Jingwen Chen;Claire Qing-Ying Huang;Xin Zhang;Sheng Dong;Xiye Yang
{"title":"A Trap-Assisted Photomultiplication-Type Organic Photodetector With High Detectivity From Visible to Shortwave Infrared Light","authors":"Jingwen Chen;Claire Qing-Ying Huang;Xin Zhang;Sheng Dong;Xiye Yang","doi":"10.1109/JEDS.2024.3523394","DOIUrl":null,"url":null,"abstract":"This letter reports a trap-assisted photomultiplication-type organic photodetector (PM-OPD) with a broad sensing range from 400 to 1400 nm. By easily tunning the donor/acceptor ratio in bulk-heterojunction layer consisting Poly([2,6’-4,8-di(5-ethylhexylthienyl)benzo[1,2-b;3,3-b]dithiophene]{3-fluoro-2[(2-ethylhexyl)carbonyl] thieno[3,4-b]thiophenediyl}) (PTB7-Th) and a novel non-fullerene acceptor (NFA) pendant 2,2’-(((2,5-bis(2-octyldodecyl)-3,6-dioxo-2,3,5,6-tetrahydropyrrolo [3,4-c]pyrrole-1,4-diyl)bis(thiophene-5,2-diyl))bis(4-oxonaphthalene-3(4H)-yl-1(4H)-ylidene)) dimalononitrile named DPP-QC, the device shows specifically a high external quantum efficiency (EQE) value of 112% and specific detectivity (D*) over <inline-formula> <tex-math>$10^{10}$ </tex-math></inline-formula> Jones at 1200 nm at a light intensity of 0.108 mW/cm2. Meanwhile the PM-OPD shows ultra-fast response time <inline-formula> <tex-math>$t_{r}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$t_{f}$ </tex-math></inline-formula> of 4.1 <inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>s and 4.3 <inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>s on microsecond (<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>s) scale. Our work proves that PM-type shortwave infrared (SWIR) OPD can simultaneously achieve high responsivity, broad-spectral response, fast response and well photodiode characteristics.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"13 ","pages":"73-78"},"PeriodicalIF":2.0000,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10816666","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10816666/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

This letter reports a trap-assisted photomultiplication-type organic photodetector (PM-OPD) with a broad sensing range from 400 to 1400 nm. By easily tunning the donor/acceptor ratio in bulk-heterojunction layer consisting Poly([2,6’-4,8-di(5-ethylhexylthienyl)benzo[1,2-b;3,3-b]dithiophene]{3-fluoro-2[(2-ethylhexyl)carbonyl] thieno[3,4-b]thiophenediyl}) (PTB7-Th) and a novel non-fullerene acceptor (NFA) pendant 2,2’-(((2,5-bis(2-octyldodecyl)-3,6-dioxo-2,3,5,6-tetrahydropyrrolo [3,4-c]pyrrole-1,4-diyl)bis(thiophene-5,2-diyl))bis(4-oxonaphthalene-3(4H)-yl-1(4H)-ylidene)) dimalononitrile named DPP-QC, the device shows specifically a high external quantum efficiency (EQE) value of 112% and specific detectivity (D*) over $10^{10}$ Jones at 1200 nm at a light intensity of 0.108 mW/cm2. Meanwhile the PM-OPD shows ultra-fast response time $t_{r}$ and $t_{f}$ of 4.1 $\mu $ s and 4.3 $\mu $ s on microsecond ( $\mu $ s) scale. Our work proves that PM-type shortwave infrared (SWIR) OPD can simultaneously achieve high responsivity, broad-spectral response, fast response and well photodiode characteristics.
求助全文
约1分钟内获得全文 求助全文
来源期刊
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology
CiteScore
5.20
自引率
4.30%
发文量
124
审稿时长
9 weeks
期刊介绍: The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信