A High Coupling Coefficient and Symmetric Transformer Based on TSV

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2024-11-20 DOI:10.1109/TCPMT.2024.3503561

Yue Deng;Fengjuan Wang;Xiangkun Yin;Yuan Yang;Ningmei Yu;Yan Li

引用次数: 0

Abstract

Transformers are the key passive devices in many radio frequency integrated circuit (RF IC) applications. In this article, a kind of ultrahigh coupling coefficient and symmetric transformer based on through-silicon via (TSV) is proposed. HFSS software is used to model and simulate the transformers with turn ratios of 1:1, 1:2, and 1:3, and the three structures are manufactured and measured. The measurement results show that the coupling coefficients of the three are 0.956, 0.971, and 0.954, and the areas are 0.007, 0.012, and 0.015 mm2. Compared with other literatures, it has the characteristics of high coupling and miniaturization.

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基于TSV的高耦合系数对称变压器

变压器是许多射频集成电路（RF IC）应用中的关键无源器件。提出了一种基于硅通孔（TSV）的超高耦合系数对称变压器。利用HFSS软件对匝比为1:1、1:2、1:3的变压器进行了建模仿真，并对三种结构进行了制造和测量。测量结果表明，三者的耦合系数分别为0.956、0.971和0.954，面积分别为0.007、0.012和0.015 mm2。与其他文献相比，它具有高耦合和小型化的特点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Components, Packaging and Manufacturing Technology ENGINEERING, MANUFACTURING-ENGINEERING, ELECTRICAL & ELECTRONIC

CiteScore

4.70

自引率

13.60%

发文量

203

审稿时长

3 months

期刊介绍： IEEE Transactions on Components, Packaging, and Manufacturing Technology publishes research and application articles on modeling, design, building blocks, technical infrastructure, and analysis underpinning electronic, photonic and MEMS packaging, in addition to new developments in passive components, electrical contacts and connectors, thermal management, and device reliability; as well as the manufacture of electronics parts and assemblies, with broad coverage of design, factory modeling, assembly methods, quality, product robustness, and design-for-environment.