Experimental Comparison of HfO2/X-Based ReRAM Devices Switching Properties by the MIM Capacitance

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-10-24 DOI:10.1109/JEDS.2024.3485622

Fernando José da Costa;Aseel Zeinati;Renan Trevisoli;Durga Misra;Rodrigo Trevisoli Doria

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引用次数: 0

Abstract

The objective of this work is to present a comparison of the switching properties in Resistive Random-Access-Memory between two different switching layer devices through the capacitance measurements. The analysis was carried out in two devices with different insulating layers, one composed of H-plasma-treated

${\mathrm { HfO}}_{2}$

and another with a stoichiometric HfO2. The device with a higher quantity of oxygen vacancy-related defects in the insulator (HfO2 w/trt) presents a wider spread of the capacitance with the application of a range of varying pulse widths. An increase in the capacitance from 3.904 to 3.917 pF/

$\mu $

m2 was observed for the same device when it was subjected to a

$144~\mu $

s pulse width, demonstrating a conductance quantization required for the application in in-memory computing systems. Also, the dielectric constant modulates due to the migration of oxygen atoms inside the device’s insulator.

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MIM电容对基于HfO2/ x的ReRAM器件开关性能的实验比较

本文的目的是通过电容测量来比较两种不同开关层器件在电阻式随机存取存储器中的开关特性。在两个具有不同绝缘层的器件中进行了分析，一个由h等离子体处理的${\ mathm {HfO}}_{2}$组成，另一个由化学计量的HfO2组成。绝缘体中氧空位相关缺陷（HfO2 w/trt）数量较高的器件在不同脉冲宽度的应用范围内呈现出更大的电容分布。当脉冲宽度为$144~ $ μ $ s时，观察到相同器件的电容从3.904增加到3.917 pF/ $\mu $ m2，证明了在内存计算系统中应用所需的电导量化。此外，介电常数由于器件绝缘体内氧原子的迁移而发生调制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.