Development of a Nb-Based Semiconductor-Superconductor Hybrid 2DEG Platform

Abstract

Semiconductor-superconductor hybrid materials are used as a platform to realize Andreev bound states, which hold great promise for quantum applications. These states require transparent interfaces between the semiconductor and superconductor, which are typically realized by in-situ deposition of an Al superconducting layer. Here a hybrid material is presented, based on an InAs 2D electron gas (2DEG) combined with in-situ deposited Nb and NbTi superconductors, which offer a larger operating range in temperature and magnetic field due to their larger superconducting gap. The inherent difficulty associated with the formation of an amorphous interface between III-V semiconductors and Nb-based superconductors is addressed by introducing a 7 nm Al interlayer. The Al interlayer provides an epitaxial connection between an in-situ magnetron sputtered Nb or NbTi thin film and a shallow InAs 2DEG. This metal-to-metal epitaxy is achieved by optimization of the material stack and results in an induced superconducting gap of approximately 1 meV, determined from transport measurements of superconductor-semiconductor Josephson junctions. This induced gap is approximately five times larger than the values reported for Al-based hybrid materials and indicates the formation of highly-transparent interfaces that are required in high-quality hybrid material platforms.