Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-11-27 DOI:10.1109/JEDS.2024.3506922

Hui Wang;Pengyu Lai;Affan Abbasi;Md Maksudul Hossain;Asif Faruque;H. Alan Mantooth;Zhong Chen

引用次数: 0

Abstract

SiC-based n-channel and p-channel MOSFETs fabricated by Fraunhofer IISB SiC CMOS technology are characterized from room temperature up to 300°C. The behaviors of these low voltage devices including the short-channel effect (SCE), p-type ohmic contact with high resistivity, and the low channel mobility due to the SiC/SiO2 interface are presented. A thorough analysis is performed to understand the cause of low channel mobility, with TCAD simulations specifically on p-channel MOSFET, providing an insight into the impact of channel length, interface traps, and contact resistivity on device performance. The analysis in this paper is important in the comprehension of the low-voltage SiC MOSFETs so as to achieve balanced n-channel and p-channel MOSFETs and lead to the monolithic integration of SiC ICs with SiC power devices.

查看原文本刊更多论文

高温下碳化硅低压n/p沟道mosfet的表征

由Fraunhofer IISB SiC CMOS技术制造的基于SiC的n沟道和p沟道mosfet的特性从室温到300°C。这些低电压器件的行为包括短通道效应（SCE），高电阻率的p型欧姆接触，以及由于SiC/SiO2界面导致的低通道迁移率。通过对p沟道MOSFET进行TCAD模拟，对沟道长度、界面陷阱和接触电阻率对器件性能的影响进行了深入分析，以了解低沟道迁移率的原因。本文的分析对于理解低电压SiC mosfet具有重要意义，从而实现n沟道和p沟道mosfet的平衡，实现SiC集成电路与SiC功率器件的单片集成。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.