Wide-Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices (Adv. Electron. Mater. 1/2025)

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2025-01-10 DOI:10.1002/aelm.202570001

Yunwei Ma, Yuan Qin, Matthew Porter, Joseph Spencer, Zhonghao Du, Ming Xiao, Boyan Wang, Yifan Wang, Alan G. Jacobs, Han Wang, Marko Tadjer, Yuhao Zhang

引用次数: 0

Abstract

Multidimensional Power Devices

Ultra-wide bandgap semiconductors are promising for power applications in grid and renewable energy systems. In article number 2300662, Yuhao Zhang and co-authors demonstrate nickel oxide as a p-type material with tunable doping and high field. The 8000 V charge-balance device shows a record high average electric field.

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具有可调受体浓度的宽禁带氧化镍用于多维功率器件（Adv.电子）。板牙。1/2025)

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.