Rhodium-Alloyed Beta Gallium Oxide Materials: New Type Ternary Ultra-Wide Bandgap Semiconductors (Adv. Electron. Mater. 1/2025)

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2025-01-10 DOI:10.1002/aelm.202570002

Xian-Hu Zha, Yu-Xi Wan, Shuang Li, Dao Hua Zhang

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Abstract

Ternary Ultra-Wide Bandgap Semiconductors

In article number 2400547, Dao Hua Zhang and co-workers show that low energy level and flat band dispersion at valence band maximum (VBM) restricts the p-type conduction of β-Ga₂O₃. Here, β₃B₂;-Ga₂O₃-based new type ternary ultra-wide bandgap semiconductors: β-(Rh_xGa_1−x)₂O₃'s alloys with x from 0 to 0.5 are reported. The energy and band-dispersion curvature of β-Ga₂O₃'s VBM are significantly enhanced via Rh-alloying. The bandgaps of β-(Rh_xGa_1−x)₂O₃ are still much larger than that in commercial silicon carbide. The β-(Rh_xGa_1−x)₂O₃ can be candidate semiconductors for a new generation of optoelectronics and power electronics.

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.