{"title":"Novel Triple Diode Solar Cells Equivalent Circuit Models With Lambert W Function Expressions","authors":"Martin Ćalasan;Snežana Vujošević","doi":"10.1109/JEDS.2024.3523278","DOIUrl":null,"url":null,"abstract":"This brief presents two new equivalent circuit schemes for triple-diode solar cell models (TDM). These schemes enable the formulation of an analytical relationship between current and voltage using the Lambert W function. A new Root Mean Square Error (RMSE) formula is also introduced. The models are validated on two solar cells and two panels under different conditions. Results show high accuracy and efficiency.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"13 ","pages":"49-53"},"PeriodicalIF":2.0000,"publicationDate":"2024-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10816474","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10816474/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This brief presents two new equivalent circuit schemes for triple-diode solar cell models (TDM). These schemes enable the formulation of an analytical relationship between current and voltage using the Lambert W function. A new Root Mean Square Error (RMSE) formula is also introduced. The models are validated on two solar cells and two panels under different conditions. Results show high accuracy and efficiency.
期刊介绍:
The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.