Charge-Based Compact Modeling of OECTs for Neuromorphic Applications

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-12-25 DOI:10.1109/JEDS.2024.3522577

Ghader Darbandy;Malte Koch;Lukas M. Bongartz;Karl Leo;Hans Kleemann;Alexander Kloes

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引用次数: 0

Abstract

Organic electrochemical transistors (OECTs) are a class of promising neuromorphic devices due to their exceptional conductivity, ease of fabrication, and cost-effectiveness. These devices exhibit ionic behavior similar to biological synapses, enabling efficient switching. Developing a compact model for OECTs is challenging due to the complex interplay of electrochemical reactions, ion transport, interactions with electrons or holes, and charge carrier dynamics that must be accurately captured and integrated into a simplified framework. In this work, we develop a combined physics-based compact model that integrates the Nernst equation from electrochemistry with thermally activated charges from semiconductor physics. This model enables easy incorporation into circuit simulations and provides a simple core framework for further extensions to account for additional effects. We fabricated, characterized, and analyzed OECTs based on PEDOT:PSS, and the proposed compact model shows good agreement with our experimental data.

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神经形态应用中基于电荷的oect紧凑建模

有机电化学晶体管（OECTs）由于其优异的导电性、易于制造和成本效益而成为一类有前途的神经形态器件。这些装置表现出与生物突触相似的离子行为，实现了高效的转换。由于电化学反应、离子传输、与电子或空穴的相互作用以及电荷载流子动力学的复杂相互作用，必须准确捕获并集成到简化的框架中，因此为oect开发一个紧凑的模型是具有挑战性的。在这项工作中，我们开发了一个基于物理的组合紧凑模型，该模型集成了电化学中的能斯特方程和半导体物理中的热激活电荷。该模型可以轻松集成到电路仿真中，并为进一步扩展提供简单的核心框架，以考虑额外的影响。我们基于PEDOT:PSS对oect进行了制备、表征和分析，所提出的紧凑模型与实验数据吻合良好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.