{"title":"Quadruple-band synglisis enables high thermoelectric efficiency in earth-abundant tin sulfide crystals","authors":"Shan Liu, Shulin Bai, Yi Wen, Jing Lou, Yongzhen Jiang, Yingcai Zhu, Dongrui Liu, Yichen Li, Haonan Shi, Shibo Liu, Lei Wang, Junqing Zheng, Zhe Zhao, Yongxin Qin, ZhongKai Liu, Xiang Gao, Bingchao Qin, Cheng Chang, Chao Chang, Li-Dong Zhao","doi":"10.1126/science.ado1133","DOIUrl":null,"url":null,"abstract":"Thermoelectrics have been limited by the scarcity of their constituent elements, especially telluride. The earth-abundant, wide-bandgap ( <jats:italic>E</jats:italic> <jats:sub>g</jats:sub> ≈ 46 <jats:italic>k</jats:italic> <jats:sub>B</jats:sub> <jats:italic>T</jats:italic> ) tin sulfide (SnS) has shown promising performance in its crystal form. We improved the thermoelectric efficiency in SnS crystals by promoting the convergence of energy and momentum of four valance bands, termed quadruple-band synglisis. We introduced more Sn vacancies to activate quadruple-band synglisis and facilitate carrier transport by inducing SnS <jats:sub>2</jats:sub> in selenium (Se)–alloyed SnS, leading to a high dimensionless figure of merit ( <jats:italic>ZT</jats:italic> ) of ~1.0 at 300 kelvin and an average <jats:italic>ZT</jats:italic> of ~1.3 at 300 to 773 kelvin in p-type SnS crystals. We further obtained an experimental efficiency of ~6.5%, and our fabricated cooler demonstrated a maximum cooling temperature difference of ~48.4 kelvin at 353 kelvin. Our observations should draw interest to earth-abundant SnS crystals for applications of waste-heat recovery and thermoelectric cooling.","PeriodicalId":21678,"journal":{"name":"Science","volume":"131 1","pages":""},"PeriodicalIF":44.7000,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Science","FirstCategoryId":"103","ListUrlMain":"https://doi.org/10.1126/science.ado1133","RegionNum":1,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MULTIDISCIPLINARY SCIENCES","Score":null,"Total":0}
引用次数: 0
Abstract
Thermoelectrics have been limited by the scarcity of their constituent elements, especially telluride. The earth-abundant, wide-bandgap ( Eg ≈ 46 kBT ) tin sulfide (SnS) has shown promising performance in its crystal form. We improved the thermoelectric efficiency in SnS crystals by promoting the convergence of energy and momentum of four valance bands, termed quadruple-band synglisis. We introduced more Sn vacancies to activate quadruple-band synglisis and facilitate carrier transport by inducing SnS 2 in selenium (Se)–alloyed SnS, leading to a high dimensionless figure of merit ( ZT ) of ~1.0 at 300 kelvin and an average ZT of ~1.3 at 300 to 773 kelvin in p-type SnS crystals. We further obtained an experimental efficiency of ~6.5%, and our fabricated cooler demonstrated a maximum cooling temperature difference of ~48.4 kelvin at 353 kelvin. Our observations should draw interest to earth-abundant SnS crystals for applications of waste-heat recovery and thermoelectric cooling.
热电材料一直受到其组成元素(尤其是碲化物)稀缺的限制。地球上储量丰富的宽禁带(E g≈46 k B T)硫化锡(sn)在晶体形态上表现出了良好的性能。我们通过促进四个价带的能量和动量的收敛来提高SnS晶体的热电效率,称为四带合成。我们在硒(Se)合金的SnS中引入了更多的Sn空位来激活四能带合成,并通过诱导SnS 2来促进载流子的传输,导致p型SnS晶体在300开尔文时的无因次优值(ZT)高达1.0,在300 ~ 773开尔文时的平均ZT为1.3。我们进一步获得了~6.5%的实验效率,并且我们制造的冷却器在353开尔文时的最大冷却温差为~48.4开尔文。我们的观察结果应该引起人们对地球上丰富的SnS晶体在废热回收和热电冷却方面的应用的兴趣。
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