Enhance Electrical Performance and Stability of InSnMgO Thin-Film Transistors by Optimizing Carrier Concentration via Mg Doping

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-11-21 DOI:10.1109/TED.2024.3499949

Shi Zong;Lei Xu;Ruyu Liang;Zengcai Song;Junming Li;Zhihua Zhu;Shijun Luo

{"title":"Enhance Electrical Performance and Stability of InSnMgO Thin-Film Transistors by Optimizing Carrier Concentration via Mg Doping","authors":"Shi Zong;Lei Xu;Ruyu Liang;Zengcai Song;Junming Li;Zhihua Zhu;Shijun Luo","doi":"10.1109/TED.2024.3499949","DOIUrl":null,"url":null,"abstract":"In this work, a low-temperature co-sputtering method was employed to fabricate high-performance amorphous InSnMgO (ITMO) thin film transistors (TFTs) with ultrathin channels. The effects of different Mg content on the electrical properties and bias stability of ITMO TFTs were studied by various characterization methods. As a result, when the sputtering power of MgO was set to 80 W, the field effect mobility (\n<inline-formula> <tex-math>$\\mu _{\\text {FE}}$ </tex-math></inline-formula>\n) reached 52.5 cm2/V\n<inline-formula> <tex-math>$\\cdot $ </tex-math></inline-formula>\ns, the low threshold voltage (\n<inline-formula> <tex-math>${V}_{\\text {th}}$ </tex-math></inline-formula>\n) of −0.28 V, and the subthreshold swing (SS) was as low as 0.239 V/decade. The super performance of the device is attributed to the reduction of oxygen vacancy concentration and the optimization of carrier concentration in the channel due to the doping of Mg. This study confirms the potential application of ITMO TFTs in the field of transparent flexible electronic devices and is expected to become a promising material for the next generation of high-resolution, low-power flat panel displays.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"277-281"},"PeriodicalIF":2.9000,"publicationDate":"2024-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10759819/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

In this work, a low-temperature co-sputtering method was employed to fabricate high-performance amorphous InSnMgO (ITMO) thin film transistors (TFTs) with ultrathin channels. The effects of different Mg content on the electrical properties and bias stability of ITMO TFTs were studied by various characterization methods. As a result, when the sputtering power of MgO was set to 80 W, the field effect mobility (

$\mu _{\text {FE}}$

) reached 52.5 cm2/V

$\cdot $

s, the low threshold voltage (

${V}_{\text {th}}$

) of −0.28 V, and the subthreshold swing (SS) was as low as 0.239 V/decade. The super performance of the device is attributed to the reduction of oxygen vacancy concentration and the optimization of carrier concentration in the channel due to the doping of Mg. This study confirms the potential application of ITMO TFTs in the field of transparent flexible electronic devices and is expected to become a promising material for the next generation of high-resolution, low-power flat panel displays.

查看原文本刊更多论文

通过Mg掺杂优化载流子浓度提高InSnMgO薄膜晶体管的电性能和稳定性

本文采用低温共溅射法制备了具有超薄沟道的高性能非晶InSnMgO （ITMO）薄膜晶体管。采用不同的表征方法研究了不同Mg含量对ITMO tft电学性能和偏置稳定性的影响。结果表明，当MgO溅射功率为80 W时，场效应迁移率（$\mu _{\text {FE}}$）达到52.5 cm2/V $\cdot $ s，低阈值电压（${V}_{\text {th}}$）为- 0.28 V，亚阈值摆幅（SS）低至0.239 V/decade。该器件的优异性能是由于Mg的掺杂降低了氧空位浓度和优化了通道中的载流子浓度。这项研究证实了ITMO tft在透明柔性电子器件领域的潜在应用，并有望成为下一代高分辨率、低功耗平板显示器的有前途的材料。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.