Germanium Doped SnO₂: An Exploratory Channel Material for High On–Off Current Ratio and Low Subthreshold Slope in n-Type SnO₂:Ge Thin Film Transistor

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-12-11 DOI:10.1109/TED.2024.3510237

Jay Singh;Suman Gora;Mandeep Jangra;Arnab Datta

{"title":"Germanium Doped SnO₂: An Exploratory Channel Material for High On–Off Current Ratio and Low Subthreshold Slope in n-Type SnO₂:Ge Thin Film Transistor","authors":"Jay Singh;Suman Gora;Mandeep Jangra;Arnab Datta","doi":"10.1109/TED.2024.3510237","DOIUrl":null,"url":null,"abstract":"We report germanium (Ge) doping in tin oxide (SnO2), which led to achieving a record ON–OFF current ratio of ~109 and a subthreshold slope (SS) of 77 mV/decade in a bottom-gated n-type SnO2:Ge thin film transistor (TFT) with 40-\n<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>\nm channel length. Ge atomic percentage control to 12.2% during cosputtering of Ge and Sn in O2 plasma was shown to reduce oxygen vacancies (from 26.13% to 12.3%), which occurred due to Ge substitution in the Sn vacant sites of SnO2 lattice, leading to rearrangement of higher formation enthalpy Ge–O bonds. Low oxygen vacancies, therefore, impacted OFF current and SS of TFT with the Ge doped channel. Furthermore, for the same percent of atomic doping with Ge, field effect mobility was increased to 14.5 cm2/V-s, and barrier height of aluminum source–drain contacts with the SnO2:Ge channel was reduced from 0.69 to 0.47 eV, which were found suitable for enhancing drive current of SnO2:Ge TFT. Physical and electrical parameters of TFT fabricated with this exploratory channel material were characterized in detail.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"282-288"},"PeriodicalIF":2.9000,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10787382/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

We report germanium (Ge) doping in tin oxide (SnO2), which led to achieving a record ON–OFF current ratio of ~109 and a subthreshold slope (SS) of 77 mV/decade in a bottom-gated n-type SnO2:Ge thin film transistor (TFT) with 40-

$\mu $

m channel length. Ge atomic percentage control to 12.2% during cosputtering of Ge and Sn in O2 plasma was shown to reduce oxygen vacancies (from 26.13% to 12.3%), which occurred due to Ge substitution in the Sn vacant sites of SnO2 lattice, leading to rearrangement of higher formation enthalpy Ge–O bonds. Low oxygen vacancies, therefore, impacted OFF current and SS of TFT with the Ge doped channel. Furthermore, for the same percent of atomic doping with Ge, field effect mobility was increased to 14.5 cm2/V-s, and barrier height of aluminum source–drain contacts with the SnO2:Ge channel was reduced from 0.69 to 0.47 eV, which were found suitable for enhancing drive current of SnO2:Ge TFT. Physical and electrical parameters of TFT fabricated with this exploratory channel material were characterized in detail.

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掺锗SnO 2: n型SnO 2:Ge薄膜晶体管高通断电流比和低亚阈斜率的探索性通道材料

我们报道了在氧化锡（SnO2）中掺杂锗（Ge），从而在沟道长度为40- $\mu $ m的n型底门控SnO2:Ge薄膜晶体管（TFT）中实现了创纪录的开关电流比~109和亚阈值斜率（SS） 77 mV/ 10年。在O2等离子体中溅射Ge和Sn时，Ge原子百分率控制在12.2%，可以减少氧空位（从26.13%降至12.3%），这是由于Ge取代了SnO2晶格中Sn空位，导致高生成焓的Ge - o键重排造成的。因此，低氧空位影响了掺杂锗通道的TFT的OFF电流和SS。此外，在相同比例的锗原子掺杂下，场效应迁移率提高到14.5 cm2/V-s，铝源漏极与SnO2:Ge沟道的势垒高度从0.69 eV降低到0.47 eV，有利于提高SnO2:Ge TFT的驱动电流。详细表征了用这种探索性通道材料制备的TFT的物理和电气参数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.